Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading-Reference-Cited by-同舟云学术

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Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading

Published:2020-06 Issue: Volume:515 Page:145934
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhu Yingbin,Wen Huihui,Zhang Hongye,Liu Zhanwei,Liu Chao,Liu Shuman

Funder

National Natural Science Foundation of China

National Major Science and Technology Projects of China

Beijing Natural Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. A new semiconductor superlattice;Sai-Halasz;Appl. Phys. Lett.,1977

2. Proprosal for strained Type-II superlattice for infrared detectors;Smith;J. Appl. Phys.,1987

3. Antimonide-based compound semiconductors for electronic devices: A review;Bennett;Solid. State. Electron.,2005

4. High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates;Desplanque;J. Cryst. Growth.,2007

5. Electronic bands of III-V semiconductor polytypes and their alignment;Belabbes;Phys. Rev. B.,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurities related micro-defects in GaSb crystal grown by LEC method;Journal of Crystal Growth;2024-03

2. A hybrid method for lattice image reconstruction and deformation analysis;Nanotechnology;2022-07-01

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