Author:
Ferreyra Romualdo Alejandro,Quiroga Matias Abel
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference34 articles.
1. DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain;Huang;IEEE Trans. Electron. Dev,2013
2. Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts;Song;IEEE Electron. Dev. Lett.,2016
3. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With fT/fmax of 454/444 GHz;Tang;IEEE Electron. Dev. Lett.,2015
4. AlGaN/GaN HEMT With 300-GHz fmax;Chung;IEEE Electron. Dev. Lett.,2010
5. C. Zhu, R. A. Ferreyra, H. Morkoç, MODULATION DOPED FETS in Wiley Encyclopedia of Electrical and Electronics Engineering, ISBN: 9780471346081, Jhon Wiley & Sons Inc, (2014).https://doi.org/10.1002/047134608X.W3149.pub2.
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