Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth-Reference-Cited by-同舟云学术

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Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

Published:2021-08 Issue: Volume:557 Page:149542
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bui Kieu My,Shiraishi Kenji,Oshiyama Atsushi

Funder

RIKEN

Ministry of Education, Culture, Sports, Science and Technology

National Institutes of Natural Sciences

University of Tokyo

Institute for Molecular Science

Institute of Solid State Physics, Chinese Academy of Sciences

Nagoya University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference51 articles.

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2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters;Akasaki;Jpn. J. Appl. Phys.,1997

3. Finite-Temperature Phase Diagram of Vicinal Si(100) Surfaces;Alerhand;Phys. Rev. Lett.,1990

4. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation;Amano;Rev. Mod. Phys.,2015

5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer;Amano;Appl. Phys. Lett.,1986

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1. Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal–Organic Vapor-Phase Epitaxy Condition: A First-Principles Study;Crystal Growth & Design;2024-07-02

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3. An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth;Applied Surface Science;2022-10

4. Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth;Physical Review B;2022-07-26

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