Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure-Reference-Cited by-同舟云学术

Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure

Published:2018-03 Issue: Volume:433 Page:51-59
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chakrabarti Somsubhra,Panja Rajeswar,Roy Sourav,Roy Anisha,Samanta Subhranu,Dutta Mrinmoy,Ginnaram Sreekanth,Maikap Siddheswar,Cheng Hsin-Ming,Tsai Ling-Na,Chang Ya-Ling,Mahapatra Rajat,Jana Debanjan,Qiu Jian-Tai,Yang Jer-Ren

Funder

Ministry of Science and Technology (MOST) Taiwan

Chang Gung Memorial Hospital (CGMH), Linkou

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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5. Stochastic Variability of Vacancy Filament Configuration in Ultra-thin Dielectric RRAM and Its Impact on OFF-state Reliability;Raghavan,2013

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