Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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3. Effect of Dry Etching to Improve Ohmic Contacts on Bulk, Lightly-Doped β-Ga2O3;ECS Journal of Solid State Science and Technology;2024-01-01
4. Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K);Materials Science in Semiconductor Processing;2023-10
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