Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles-Reference-Cited by-同舟云学术

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Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

Published:2016-12 Issue: Volume:388 Page:584-588
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kang H.L.,Lao J.B.,Li Z.P.,Yao W.Q.,Liu C.,Wang J.Y.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Disordering of Si-doped AlAs/GaAs superlattice by annealing;Kawabe;Jpn. J. Appl. Phys.,1984

2. Refractive index of GaAs–AlAs superlattice grown by MBE;Auzuki;J. Electron. Meter.,1983

3. Measuring the roughness of buried interfaces by sputter depth profiling;Baryshev;Nanotechnology,2013

4. Surface and interface roughness estimations by X-ray reflectivity and RBS measurements;Fujii;Surf. Interface Anal.,2012

5. Atomic mixing, surface roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure;Hofmann;Surf. Interface Anal.,1994

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3. Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films;Applied Surface Science;2017-07

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