Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors-Reference-Cited by-同舟云学术

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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors

Published:2019-05 Issue: Volume:475 Page:565-570
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Abliz Ablat,Xu Lei,Wan Da,Duan Haiming,Wang Jingli,Wang Chunlan,Luo Shijun,Liu Chuansheng

Funder

National Natural Science Foundation of China

Natural Science Foundation of Xinjiang Uygur Autonomous Region of China

Doctoral Program of Tian Chi Foundation of Xinjiang Uygur Autonomous Region of China

Foundation for University Key Teacher by Henan Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference40 articles.

1. Metal oxides for optoelectronic applications;Yu;Nat. Mater.,2016

2. Metal oxide semiconductor thin-film transistors for flexible electronics;Petti;Appl. Phys. Rev.,2016

3. Material characteristics and applications of transparent amorphous oxide semiconductors;Kamiya;NPG Asia Mater.,2010

4. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature;Fortunato;Appl. Phys. Lett.,2004

5. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region;Cam Phu Thi;Appl. Surf. Sci.,2017

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