Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system-Reference-Cited by-同舟云学术

Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

Published:2004-04 Issue:1-4 Volume:228 Page:128-134
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Hong-Ying,Han Sheng,Cheng Chih-Hsuan,Shih Han C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. K.H.J. Buschow, R.W. Chan, M.C. Flemings, B. Ilschner, E.J. Kramer, S. Mahajan (Eds.), Encyclopedia of Materials: Science and Technology, vol. 1, Elsevier, Amsterdam, New York, 2001.

2. Synthesis of cubic aluminum nitride by carbothermal nitridation reaction

3. Corrosion and XPS investigations of nitrogen implanted aluminium

4. GaN, AlN, and InN: A review

5. Ion beam assisted deposition of AlN monolithic films and Al/AlN multilayers: a comparative study

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