Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference13 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Control of silica cap properties by oxygen plasma treatment for single-cap selective impurity free vacancy disordering
3. Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering
4. Quantum well intermixing
5. High-Density Plasma Enhanced Quantum Well Intermixing in InGaAs/InGaAsP Structure Using Argon Plasma
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1. GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film;Materials Science in Semiconductor Processing;2022-10
2. Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing;Materials Science in Semiconductor Processing;2013-06
3. Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers;Applied Surface Science;2013-04
4. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching;Materials Research Bulletin;2009-12
5. Monolithically integrated 4x4 SOA switch fabricated using quantum well intermixing;SPIE Proceedings;2009-02-12
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