Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O2 plasma cleaning and intermediate layers
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference17 articles.
1. Rapid thermal annealed InGaN/GaN flip-chip LEDs
2. Damage-free separation of GaN thin films from sapphire substrates
3. Leakage Current Characteristic of Vertical GaN-Based Light Emitting Diodes with Passivation Structures
4. Thermally Stable and Highly Reflective ITO/Ag-Based Ohmic Contacts to p-GaN
5. Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes
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1. Optimized via-hole structure in GaN-based vertical-injection light-emitting diodes;Journal of the Korean Physical Society;2016-01
2. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes;Applied Surface Science;2014-01
3. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount;Semiconductors;2013-03
4. Shape-controlled synthesis of GaN microrods by ammonolysis route;Applied Surface Science;2012-12
5. Effect of Residual Stress of Thin and Thick Layers on Laser Lifted-Off Light Emitting Diodes;Journal of The Electrochemical Society;2011
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