Removal of ion-implanted photoresists on GaAs using two organic solvents in sequence-Reference-Cited by-同舟云学术

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Removal of ion-implanted photoresists on GaAs using two organic solvents in sequence

Published:2016-07 Issue: Volume:376 Page:34-42
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Oh Eunseok,Na Jihoon,Lee Seunghyo,Lim Sangwoo

Funder

Industrial Strategic Technology Development Program

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Nanometre-scale electronics with III–V compound semiconductors;del Alamo;Nature,2011

2. Ultimate scaling of CMOS logic devices with Ge and III–V materials;Heyns;MRS Bull.,2009

3. Performance evaluation of 15nm gate length double-gate n-MOSFETs with high mobility channels: HIV, Ge and Si;Kim;ECS Trans.,2008

4. Gallium arsenide and other compound semiconductors on silicon;Fang;J. Appl. Phys.,1990

5. Steam-injected SPM process for all-wet stripping of implanted photoresist;DeKraker;Solid State Phenom.,2009

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4. Addition of nitrate to superheated water and its reaction mechanism with C-C cross-linked ion-implanted photoresists;Applied Surface Science;2019-12

5. Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile;Journal of Industrial and Engineering Chemistry;2019-09

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