Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes-Reference-Cited by-同舟云学术

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Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes

Published:2013-03 Issue: Volume:269 Page:143-147
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Perný Milan,Mikolášek Miroslav,Šály Vladimír,Ružinský Michal,Ďurman Vladimír,Pavúk Milan,Huran Jozef,Országh Juraj,Matejčík Štefan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Amorphous SiC: applications for silicon solar cells;Janz,2006

2. Electronic properties of intrinsic and doped amorphous silicon carbide films;Vetter;Thin Solid Films,2006

3. Applications of microcrystalline hydrogen-ated cubic silicon carbide for amorphous silicon thin film solar cells;Ogawa;Thin Solid Films,2008

4. Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si hetero-junction solar cells;Fujiwara;J. Appl. Phys.,2007

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of rapid thermal annealing on impurities removal efficiency from silicon carbide for optoelectronic applications;The International Journal of Advanced Manufacturing Technology;2019-11-27

2. Characterization of SiC thin films deposited by HiPIMS;Materials Research;2014-04-01

3. RIR MAPLE procedure for deposition of carbon rich Si/C/H films;Applied Surface Science;2014-02

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