Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition-Reference-Cited by-同舟云学术

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Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition

Published:2013-03 Issue: Volume:269 Page:92-97
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Choi Yong-June,Gong Su Cheol,Johnson David C.,Golledge Stephen,Yeom Geun Young,Park Hyung-Ho

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Transparent conducting oxides;Ginley;MRS Bull.,2000

2. Phase transformations in pulsed laser deposited nanocrystalline tin oxide thin films;Fan;Chem. Mater.,2003

3. Structural and electrical properties of atomic layer deposited Al-doped ZnO films;Lee;Adv. Funct. Mater.,2011

4. Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition;Agura;Thin Solid Films,2003

5. The influence of high energetic oxygen negative ions and active oxygen on the microstructure and electrical properties of ZnO:Al films by MF magnetron sputtering;Hao;Appl. Surf. Sci.,2012

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