O2+ versus Cs+ for high depth resolution depth profiling of III–V nitride-based semiconductor devices-Reference-Cited by-同舟云学术

O2+ versus Cs+ for high depth resolution depth profiling of III–V nitride-based semiconductor devices

Published:2004-06 Issue: Volume:231-232 Page:684-687
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kachan M.,Hunter J.,Kouzminov D.,Pivovarov A.,Gu J.,Stevie F.,Griffis D.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

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3. M. Petravic, G. Li, in: A. Benninghoven et al. (Eds.), Secondary Ion Mass Spectrometry SIMS IX, Wiley, Chichester, 1993, p. 690.

4. Short Communication SIMS study of GaAsN/GaAs multiple quantum wells

5. High-resolution depth profiling of In[sub x]Ga[sub 1−x]As/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

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