On the reliability of SIMS depth profiles through HfO2-stacks-Reference-Cited by-同舟云学术

On the reliability of SIMS depth profiles through HfO2-stacks

Published:2004-06 Issue: Volume:231-232 Page:569-573
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Vandervorst W.,Bennett J.,Huyghebaert C.,Conard T.,Gondran C.,De Witte H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks

2. C. Huyghebaert, T. Conard, W. Vandervorst, these proceeding.

3. C.F.H. Gondran, J.A. Bennett, M.R. Beebe, Sputtering artefacts in depth profile analysis of HfO2 and HfSixOy, Presented at the 49th AVS Symposium, Denver, USA, November 6, 2002

4. Optimal low-energy SIMS conditions for characterizing ZrO2/Si interfaces

5. J. Bennett, W. Vandervorst, M. Beebe, C. Sparks, C. Gondran, these proceedings.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement of Silver Nanolayer Absorption by the Body in an in Vivo Model of Inflammatory Gastrointestinal Diseases;Metrology and Measurement Systems;2016-03-01

2. Ultra low energy O2 + SIMS depth profiling of superficial poly(CuPc) and Co(II)T(o-NH2)PP monomolecular layers;Surface and Interface Analysis;2012-05-24

3. Mass Spectrometry in Semiconductor Research;Mass Spectrometry Handbook;2012-05-21

4. TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM;Surface and Interface Analysis;2012-05-04

5. Thin layer composition profiling with angular resolved x-ray photoemission spectroscopy: Factors affecting quantitative results;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-05