An empirical potential approach to structural stability of GaNxAs1−x thin films on GaAs(111)-Reference-Cited by-同舟云学术

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An empirical potential approach to structural stability of GaNxAs1−x thin films on GaAs(111)

Published:2005-05 Issue:1-4 Volume:244 Page:170-173
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ito Tomonori,Suda Takashi,Akiyama Toru,Nakamura Kohji

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. J. Neugebauer, C.G. Van de Walle, Phys. Rev. B 51 (1995) 10, 568.

3. The growth and properties of group III nitrides

4. Bowing parameter of the band-gap energy of GaNxAs1−x

5. Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy

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