The electronic and optical properties of Si/SiO2 superlattices: role of confined and defect states-Reference-Cited by-同舟云学术

The electronic and optical properties of Si/SiO2 superlattices: role of confined and defect states

Published:2000-12 Issue:1-2 Volume:470 Page:32-42
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Degoli Elena,Ossicini Stefano

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference29 articles.

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2. Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formation

3. Theoretical study of the band offset at silicon-oxide/silicon interfaces with interfacial defects

4. First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces

5. Relation between oxide growth direction and stress on silicon surfaces and at silicon-oxide/silicon interfaces

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