Atomic geometry and electronic structure of
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference7 articles.
1. S‐passivated InP (100)‐(1×1) surface prepared by a wet chemical process
2. Structure of S‐passivated InP(100)‐(1×1) surface
3. Structural determination of the S-passivated InP(100)-(1×1) surface by dynamical low-energy electron-diffraction analysis
4. Analysis of separable potentials
5. Self-interaction correction to density-functional approximations for many-electron systems
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1. Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogens;Applied Surface Science;2012-08
2. Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Quality through a Novel Sulfuration Method;Advanced Materials Research;2011-07
3. Atomic and electronic structure of S-terminated GaAs(001) surface;Journal of Applied Physics;2010-09-15
4. Surface Structure and Electronic Property of InP(001)-(2 × 1)S Surface: A First-Principles Study;Chinese Physics Letters;2010-04
5. First-principles study of sulfur passivation of GaP(001) surfaces at one-monolayer coverage;Solid State Communications;2008-07
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