Arsenic adatom migration on a GaAs(100) surface using a first-principles calculation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference23 articles.
1. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
2. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
3. The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces
4. Determination of the surface structures of the GaAs(001)-(2×4) As-rich phase
5. Energetics of As dimers on GaAs(001) As-rich surfaces
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1. Role of sidewall diffusion in GaAs nanowire growth: A first-principles study;Physical Review B;2012-08-15
2. GROWTH MECHANISM OF RING SHAPED NANOSTRUCTURES SELF-ASSEMBLY UPON DROPLET EPITAXY;Surface Review and Letters;2012-06
3. Detailed modeling of the epitaxial growth of GaAs nanowires;Nanotechnology;2009-12-10
4. Dynamics of In atom during InAs/GaAs(0 0 1) growth process;Applied Surface Science;2003-06
5. Bonding and Energetics;Principles of Surface Physics;2003
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