Bond rupture of threefold-coordinated Si atoms at intrinsic sites on the Si()-(2×1) induced by 1.16-eV photon excitation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference17 articles.
1. Site-sensitive yield of atomic emission induced by laser irradiation on Si(111)−7×7 surface
2. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy
3. Photoetching of Si(111)-(7 × 7) studied by STM
4. Laser-Induced Electronic Bond Breaking and Desorption of Adatoms on Si(111)-(7×7)
5. Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111)
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1. Comparison of Electronic-Excitation-Induced Structural Modification of Carbon-Based Nanomaterials with that of Semiconductor Surfaces;Nano;2016-06
2. Growth of Si on Si(1 1 1)-7 × 7 at room temperature under laser substrate excitation;The European Physical Journal Applied Physics;2015-01
3. Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2×1) by femtosecond laser excitation;Applied Physics Letters;2011-01-03
4. Excitation-induced germanium quantum dot formation on Si(100)-(2×1);Journal of Applied Physics;2010-08
5. Local bond rupture of Si atoms on Si(111)-(2×1) induced by the surface π–π∗ excitation;Surface Science;2009-05
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