Influences of the Si anisotropy on Ge nanowire formation and related island shape transition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
3. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
4. Growth of Ge on Si(100) and Si(113) studied by STM
5. Self-assembled Ge nanowires grown on Si(113)
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1. Surface reconstruction at the initial Ge adsorption stage on Si(114)-2 × 1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03
2. Study of H:Si(113)2×2 Structure by Scanning Tunneling Microscopy and Ab Initio Calculation;e-Journal of Surface Science and Nanotechnology;2010
3. Silver: a novel growth catalyst for Ge nanoislands on Si(113);physica status solidi (RRL) - Rapid Research Letters;2009-10-07
4. From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces;physica status solidi (a);2009-06-22
5. Nucleation, growth, and deformation of one-dimensional Ge nanostructures on the Si(5512)-2×1 surface;Surface Science;2008-07
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