Self-assembled growth of ordered Ge nanoclusters on the Si(111)-(7×7) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Electronic and atomic structure of in the initial stages of Ge chemisorption
2. Comparison of the first stages of the adsorption of Pb and Ge on the Si(111)7×7 surface
3. Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy
4. Initial adsorption process of Si atoms on an Si(111)7×7 surface studied by scanning tunneling microscopy
5. Mesh pattern of Ge islands grown using solid phase epitaxy
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