Atomic configurations during Si incorporation on GaAs(001) in As atmosphere evidenced by reflectance difference spectroscopy-Reference-Cited by-同舟云学术

Atomic configurations during Si incorporation on GaAs(001) in As atmosphere evidenced by reflectance difference spectroscopy

Published:1997-08 Issue:1 Volume:385 Page:l917-l921
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Däweritz L,Schützendübe P,Reiche M,Ploog K.H

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference17 articles.

1. E.F. Schubert, Delta-doping of Semiconductors, Cambridge University Press, Cambridge, 1996; R.C. Newman, Semicond. Sci. Technol. 9 (1994) 1794; and references therein.

2. Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures

3. Growth of Si on different GaAs surfaces: A comparative study

4. Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system

5. The location of silicon atoms and the initial stages of formation of the interface studied by STM

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