Properties of InP(110) surfaces, InP(110)−Ag interfaces and InP(110)−Ag schottky diodes contribution of the temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Correlation of the fine structure of InM4.5N4.5N4.5Auger spectrum and thermal degradation at InP surfaces
2. Surface and contact properties of GaAs overlaid by silver
3. Fermi level pinning on (110) GaAs surfaces studied by CPD and SPV topographies
4. Determination of layer thickness by auger electron spectroscopy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low temperature studies of semiconductor surfaces;Progress in Surface Science;1991
2. Effect of inside-spread surface states on Fermi level pinning;Surface Science;1990-11
3. Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes;Thin Solid Films;1990-10
4. Investigations of Ag(100)In and Ag(111)In interfaces with local probes;Thin Solid Films;1990-09
5. Growth of As layers on InP(110);Surface Science;1989-04
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