Energy-band-structure calculation by below-band-gap spectrophotometry in thin layers of non-crystalline semiconductors: A case study of unhydrogenated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si37.svg" display="inline" id="d1e1162"><mml:mi>a</mml:mi></mml:math>-Si-Reference-Cited by-同舟云学术

Energy-band-structure calculation by below-band-gap spectrophotometry in thin layers of non-crystalline semiconductors: A case study of unhydrogenated a-Si

Published:2022-10 Issue: Volume:594 Page:121803
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Ballester M.,Márquez A.P.,García-Vázquez C.,Díaz J.M.,Blanco E.,Minkov D.,Fernández-Ruano S.M.,Willomitzer F.,Cossairt O.,Márquez E.

Funder

Ministerio de Ciencia, Innovación y Universidades

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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5. Optical transmittance for strongly-wedge-shaped semiconductor films: appearance of envelope-crossover points in amorphous as-based chalcogenide materials;Ruiz-Pérez;Coatings,2020

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