Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications-Reference-Cited by-同舟云学术

Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications

Published:2012-09 Issue:17 Volume:358 Page:2253-2256
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Roczen Maurizio,Malguth Enno,Schade Martin,Schöpke Andreas,Laades Abdelazize,Blech Michael,Gref Orman,Barthel Thomas,Töfflinger Jan Amaru,Schmidt Manfred,Leipner Hartmut S.,Korte Lars,Rech Bernd

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Silicon nanostructures for third generation photovoltaic solar cells

2. Nanostructures for photovoltaics

3. Third Generation Photovoltaics: Advanced Solar Energy Conversion;Green,2003

4. A 720 mV open circuit voltage SiOx:c‐Si:SiOxdouble heterostructure solar cell

5. A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVD

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of SiC nanowires on the high-temperature microwave absorption properties of SiCf/SiC composites;Journal of the European Ceramic Society;2019-05

2. Silicon Nanodot Layers for Photovoltaic Application: Size/Density Control and Electrical Properties;Zeitschrift für Physikalische Chemie;2014-01-29

3. Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting;Journal of Applied Spectroscopy;2013-07

4. Structural properties of Si/SiO2nanostructures grown by decomposition of substoichiometric SiOxNylayers for photovoltaic applications;physica status solidi (a);2012-12-05

5. Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications;Applied Physics A;2012-05-09