Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors-Reference-Cited by-同舟云学术

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Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors

Published:2008-05 Issue:19-25 Volume:354 Page:2657-2661
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Jandieri K.,Rubel O.,Baranovskii S.D.,Reznik A.,Rowlands J.A.,Kasap S.O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Random phase model of amorphous semiconductors II. Hot electrons

2. Impact ionization and mobilities of charge carriers at high electric fields in amorphous selenium

3. Features of carriers at very high electric fields in a-Se and a-Si:H

4. An avalanche-mode amorphous Selenium photoconductive layer for use as a camera tube target

5. Impact ionization process in amorphous selenium

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Generalized lucky-drift model for impact ionization in semiconductors with disorder;Journal of Physics: Condensed Matter;2011-01-13

2. Amorphous selenium and its alloys from early xeroradiography to high resolution X-ray image detectors and ultrasensitive imaging tubes;physica status solidi (b);2009-07-06

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