A change of photoinduced dilation of a-Si:H by cyanide treatment-Reference-Cited by-同舟云学术

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A change of photoinduced dilation of a-Si:H by cyanide treatment

Published:2004-06 Issue: Volume:338-340 Page:365-368
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Sobajima Y.,Mori K.,Tsukamoto M.,Kamiguchi H.,Yoshida N.,Kobayashi H.,Nonomura S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. Chemical prevention of light-induced degradation in amorphous silicon films

3. Experimental evidence of photoinduced expansion in hydrogenated amorphous silicon using bending detected optical lever method

4. Photoinduced volume expansion and contraction in a-Si:H films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of thermal history on the electrical properties of amorphous carbon nitride films prepared by reactive sputtering;Japanese Journal of Applied Physics;2014-10-07

2. Ab initio material design of CN for control of DB in a-Si;Physica B: Condensed Matter;2006-04

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