Steady-state photocarrier grating method of determining electronic states parameters in amorphous semiconductors-Reference-Cited by-同舟云学术

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Steady-state photocarrier grating method of determining electronic states parameters in amorphous semiconductors

Published:2005-06 Issue:16-17 Volume:351 Page:1383-1392
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Nowak Marian,Starczewska Anna

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators

2. Ambipolar drift-length measurement in amorphous hydrogenated silicon using the steady-state photocarrier grating technique

3. Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs

4. Self‐consistency and self‐sufficiency of the photocarrier grating technique

5. Ambipolar diffusion length measurements in hydrogenated amorphous silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Steady-State Photocarrier Grating Method;Advanced Characterization Techniques for Thin Film Solar Cells;2016-07-22

2. Steady-State Photocarrier Grating Method;Advanced Characterization Techniques for Thin Film Solar Cells;2011-04-07

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