Thermally stimulated currents in GaSxSe1−x Solid solutions-Reference-Cited by-同舟云学术

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Thermally stimulated currents in GaSxSe1−x Solid solutions

Published:1979-09 Issue:3 Volume:4 Page:419-427
ISSN:0390-6035
Container-title:Materials Chemistry
language:en
Short-container-title:Materials Chemistry

Author:

De Blasi C.,Galassini S.,Micocci G.,Ruggiero L.,Tepore A.,Rizzo A.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference16 articles.

1. The optical absorption edge in layer structures

2. Proc. Sci. Conf. Results of Research Kishinev State Univ. in 1967;Andronik,1968

3. Preparation and crystallography of gallium sulfide–selenide solid solutions

4. �ber die Kristallstruktur des GaS

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1. Trapping centers in undoped GaS layered single crystals;Applied Physics A;2003-08

2. Trapping centres in Cl-doped GaSe single crystals;Journal of Applied Physics;1997-05

3. Deep levels in indium selenide single crystals doped with iodine;Journal of Applied Physics;1995-11

4. Properties of gallium selenide single crystal;Progress in Crystal Growth and Characterization of Materials;1994-01

5. Hall effect and deep level transient spectroscopy measurements in indium selenide doped with chlorine;Solar Energy Materials and Solar Cells;1992-12

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