Microstructural study of dynamically annealed c-Si using MeV N+ ions-Reference-Cited by-同舟云学术

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Microstructural study of dynamically annealed c-Si using MeV N+ ions

Published:2007-03 Issue:1 Volume:256 Page:276-280
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sahoo P.K.,Satpati B.,Satyam P.V.,Pradhan A.,Kulkarni V.N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Reliability of gate oxide grown on nitrogen‐implanted Si substrates

2. Ion beam induced amorphization in α quartz

3. Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing

4. Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation

5. High-temperature ion implantation into quartz

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam induced evolution of surface morphology and optical properties of SnO2–ZnO nanocomposite thin films;Ceramics International;2015-08

2. MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2thin films;Materials Research Express;2015-04-16

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