Strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures by Si+ ion implantation-Reference-Cited by-同舟云学术

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Strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures by Si+ ion implantation

Published:2006-01 Issue:1-2 Volume:242 Page:568-571
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Holländer B.,Buca D.,Lenk St.,Mantl S.,Herzog H.-J.,Hackbarth Th.,Loo R.,Caymax M.,Mörschbächer M.J.,Fichtner P.F.P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. J. Welser, J.L. Hoyt, S. Takagi, J.F. Gibbons, Tech. Dig. Int. Electron Dev. Meet. 1994, p. 373.

2. K. Rim, J. Chu, H. Chen, K.A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, H.-S. Wong, VLSI Symposium 2002, IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers.

3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

4. Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation

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