Depth profiling by Raman spectroscopy of high-energy ion irradiated silicon carbide
Author:
Funder
Peking University
NSFC
MOST of China
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference43 articles.
1. Radiation effects in SiC for nuclear structural applications
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4. Structure and properties of ion-beam-modified (6H) silicon carbide
5. Study of the damage produced in silicon carbide by high energy heavy ions
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