Formation of ion tracks in amorphous silicon nitride films with MeV C 60 ions-Reference-Cited by-同舟云学术

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Formation of ion tracks in amorphous silicon nitride films with MeV C 60 ions

Published:2015-08 Issue: Volume:356-357 Page:22-27
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kitayama T.,Morita Y.,Nakajima K.,Narumi K.,Saitoh Y.,Matsuda M.,Sataka M.,Tsujimoto M.,Isoda S.,Toulemonde M.,Kimura K.

Funder

JSPS KAKENHI

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Damage creation via electronic excitations in metallic targets part I: Experimental results

2. Experimental determination of track cross-section in Gd3Ga5O12 and comparison to the inelastic thermal spike model applied to several materials

3. Examination of fission fragment tracks with an electron microscope

4. Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal: Evidence for two thresholds of damage creation

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1. Modification of Cu Oxide and Cu Nitride Films by Energetic Ion Impact;Quantum Beam Science;2024-04-10

2. The effect of aluminium concentration on the resistance of Si3N4 to ion track formation;Vacuum;2024-02

3. High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride;Crystals;2022-10-05

4. Modelling of track formation in nanocrystalline inclusions in Si₃N₄;Journal of Applied Physics;2022-08-28

5. Piezospectroscopic analysis of mechanical stresses in Si3N4 and AlN irradiated with high-energy bismuth ions;Recent Contributions to Physics;2022-06

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