Laterally controlled ultra-low energy ion implantation using electrostatic masking-Reference-Cited by-同舟云学术

Laterally controlled ultra-low energy ion implantation using electrostatic masking

Published:2022-02 Issue: Volume:512 Page:96-101
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Auge M.^ORCID,Junge F.^ORCID,Hofsäss H.

Funder

Volkswagen Foundation

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Recent advances in electrical doping of 2D semiconductor materials: Methods, analyses, and applications;Yoo;Nanomaterials,2021

2. Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene;Åhlgren;Phys. Rev. B,2011

3. The role of ion implantation in CMOS scaling: A tutorial review;Current;AIP Conf. Proc.,2019

4. SDTrimSP Version 6.00;Schneider,2019

5. Binary collision approximation simulations of ion solid interaction without the concept of surface binding energies;Hofsäss;Nucl. Instrum. Methods Phys. Res., Sect. B,2021

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Properties of MoSe₂ Monolayer Implanted with Ultra-Low-Energy Cr Ions;ACS Applied Materials & Interfaces;2023-07-11

2. Low energy ion-solid interactions: a quantitative experimental verification of binary collision approximation simulations;Materials Research Express;2023-07-01

3. Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation;Nanomaterials;2023-02-08

4. Bond defects in graphene created by ultralow energy ion implantation;Carbon;2023-01

5. Bond Defects in Graphene Created by Ultralow Energy Ion Implantation;SSRN Electronic Journal;2022