Effect of helium ion beam treatment on wet etching of silicon dioxide

Author:

Petrov Yu.V.,Grigoryev E.A.,Sharov T.V.,Baraban A.P.

Funder

Interdisciplinary Resource Centre for Nanotechnology of Research

St-Petersburg State University, Russia

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference42 articles.

1. Enhanced etching of sapphire damaged by ion implantation;Dongzhu;J. Phys. D Appl. Phys.,1998

2. Etching of amorphous Al2O3 produced by ion implantation;McHargue;Nucl. Instr. Meth. Phys. Res. B,1997

3. Etching characteristics of SiO2 irradiated with focused ion beam;Sadoh;Nucl. Instr. Meth. Phys. Res. B,2003

4. Wet etching of ion-implanted silicon dioxide monitored by atomic-force microscopy;Bukharaev;Russ. Microlectron.,2002

5. Ion beam enhanced etching of LiNbO3;Schrempel;Nucl. Instr. Meth. Phys. Res. B,2006

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