Gas cluster ion beams for wafer processing-Reference-Cited by-同舟云学术

Gas cluster ion beams for wafer processing

Published:2005-08 Issue:1-2 Volume:237 Page:235-239
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mack M.E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

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2. L.P. Allen et al., International SOI Conference, Williamsburg, VA, October 7–11 2002.

3. J. Weldon, R. MacCrimmon, S. Caliendo, Y. Shao, J. Hautala, B. Zide, M. Gwinn, GCIB Process Development for Electronic and Industrial Application, 5th Workshop on Cluster Ion Beam and Advanced Quantum Beam Process, September 30, 2004, Kyoto, Japan.

4. J.O. Borland, Alternative USJ formation and characterization methods for 45nm node technology, Nucl. Instr. and Meth. B, these Proceedings, doi:10.1016/j.nimb.2005.04.106.

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1. Gas cluster ion beam surface treatments for reducing field emission and breakdown of electrodes and SRF cavities;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08

2. Interactions of liquid cluster ion beams with metal surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-05

3. Concepts and designs of ion implantation equipment for semiconductor processing;Review of Scientific Instruments;2006-11