Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation-Reference-Cited by-同舟云学术

Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

Published:2005-04 Issue:1-4 Volume:231 Page:463-466
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hopf T.,Jamieson D.N.,Hearne S.M.,Yang C.,Pakes C.I.,Dzurak A.S.,Gauja E.,Clark R.G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

2. ISE Integrated Systems Engineering AG, Zurich, Available from:

4. Semiconductor material and device characterization;Schroder,1998

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