Strain buildup in GaAs due to 100MeV Ag ion irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference29 articles.
1. Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide
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1. Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC;Journal of Applied Physics;2024-07-17
2. Evidence of defect‐annealing effect in swift heavy‐ion‐irradiated indium phosphide;Journal of Raman Spectroscopy;2022-03-03
3. A potential lattice damage scale in swift heavy ion irradiated InP;Journal of Raman Spectroscopy;2021-02-22
4. Fluence Enhanced Optical Response of Ag Implanted Amorphous Carbon Thin Films;C;2019-08-05
5. Study of the formation mechanism of hierarchical silicon structures produced by sequential ion beam irradiation and anodic etching;Vacuum;2017-04
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