Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
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2. Effect of microstructure on the resilience of silicon carbide to palladium attack;López-Honorato;J. Am. Ceram. Soc.,2010
3. Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high temperature;Kim;J. Electron. Mater.,1999
4. Pd- and Pt-SiC Schottky diodes for detection of H2 and CH4 at high temperature;Kim;Sens. Actuators B,2001
5. Hydrogen sensors – a review;Hübert;Sens. Actuators B,2011
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