2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
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2. M.A. Belaïd, et al., Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices, in: Proc. of SISPAD, Tokyo, 2005.
3. Physics of Semiconductor Devices;Sze,1981
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