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The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions

  • Published:2018-04 Issue: Volume:421 Page:27-31
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ieshkin A.E.,Kireev D.S.,Ermakov Yu.A.,Trifonov A.S.,Presnov D.E.,Garshev A.V.,Anufriev Yu.V.,Prokhorova I.G.,Krupenin V.A.,Chernysh V.S.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of the Cluster-Ion Treatment of the Surface of a KGd(WO4)2:Nd Single Crystal;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2024-04

2. Features of cluster ion treatment of the surface of KGd(WO<sub>4</sub>)<sub>2</sub>:Nd single crystal;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2024-03-15

3. On the angular distributions of atoms sputtered by gas cluster ion beam;Vacuum;2023-06

4. Peculiarities of the Processing of Polycrystalline AlN Films on Glass-Ceramic and Si Substrates by Argon Cluster Ions;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-08

5. The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates;Nanomaterials;2022-02-17
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