Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
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1. Analysis technique for ultra shallow junction using medium energy ion scattering time-of-flight elastic recoil detection analysis;Surface and Interface Analysis;2014-06-11
2. Time of flight elastic recoil detection analysis with toroidal electrostatic analyzer for ultra shallow dopant profiling;Surface and Interface Analysis;2012-01-30
3. Active dopant profiling of ultra shallow junction annealed with combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy;AIP Conference Proceedings;2012
4. Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
5. Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
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