RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs-Reference-Cited by-同舟云学术

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RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs

Published:2019-04 Issue: Volume:445 Page:1-7
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Coelho-Júnior H.,Maltez R.L.

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference31 articles.

1. III-nitride semiconductors for intersubband optoelectronics: a review;Beeler;Semicond. Sci. Technol.,2013

2. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies;Morkoç;J. Appl. Phys.,1994

3. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes;Nakamura;Science,1998

4. Merits of gallium nitride based power conversion;Scott;Semicond. Sci. Technol.,2013

5. Tuning optical properties of GaN-based nanostructures by charge screening;Di Carlo;Phys. Status Solidi Appl. Res.,2001

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PL characterization of GaN nanolayer obtained by N ion implantation into Si3N4/GaAs;Optical Materials;2020-03

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