Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Ion beam crystallography of surfaces and interfaces
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Medium energy ion scattering for the high depth resolution characterisation of high-k dielectric layers of nanometer thickness;Applied Surface Science;2013-09
2. High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
3. High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS;ECS Transactions;2009-09-25
4. Chemical and optical profiling of ultra thin high-k dielectrics on silicon;Thin Solid Films;2008-11
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