Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry

Author:

Sajavaara T.,Brijs B.,Giangrandi S.,Arstila K.,Vantomme A.,Vandervorst W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition;ECS Journal of Solid State Science and Technology;2014

2. Thin Film Characterisation Using MeV Ion Beams;Ion Beams in Nanoscience and Technology;2009

3. Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-12

4. Elastic Recoil Detection Analysis;Encyclopedia of Analytical Chemistry;2008-09-29

5. Ion-sputtering deposition of Ca–P–O films for microscopic imaging of osteoblast cells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08

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