Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2003.
2. Ion beam crystallography of surfaces and interfaces
3. Medium energy ion scattering using a toroidal analyzer combined with a microbeam line
4. Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering
5. Backscattering Spectrometry;Chu,1978
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1. The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing;Scientific Reports;2017-10-12
2. Analysis technique for ultra shallow junction using medium energy ion scattering time-of-flight elastic recoil detection analysis;Surface and Interface Analysis;2014-06-11
3. Time of flight elastic recoil detection analysis with toroidal electrostatic analyzer for ultra shallow dopant profiling;Surface and Interface Analysis;2012-01-30
4. Active dopant profiling of ultra shallow junction annealed with combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy;AIP Conference Proceedings;2012
5. Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
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