Quantitative considerations in medium energy ion scattering depth profiling analysis of nanolayers-Reference-Cited by-同舟云学术

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Quantitative considerations in medium energy ion scattering depth profiling analysis of nanolayers

Published:2016-11 Issue: Volume:387 Page:77-85
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zalm P.C.,Bailey P.,Reading M.A.,Rossall A.K.,van den Berg J.A.

Funder

European Commission Research Infrastructure Action

University of Huddersfield

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference39 articles.

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2. Practical surface analysis;Tromp,1992

3. Surf. Sci.;Bailey,1999

4. High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering

5. Damage accumulation and dopant migration during shallow As and Sb implantation into Si

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