Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN-Reference-Cited by-同舟云学术

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Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN

Published:2019-11 Issue: Volume:458 Page:164-168
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Titov A.I.,Karaseov P.A.,Karabeshkin K.V.,Ermolaeva G.M,Shilov V.B.

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference31 articles.

1. Luminescence properties of defects in GaN

2. Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices;Morkoç,2009

3. Nitride Semiconductors: Handbook on Materials and Devices;Ruterana,2003

4. A modern perspective on the history of semiconductor nitride blue light sources

5. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

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1. Micro Raman analysis on the impact of light ion irradiation of hydride vapor-phase epitaxy grown gallium nitride epilayers;Thin Solid Films;2022-11

2. Degradation of GaN Conductivity Under Irradiation with Swift Ions;Springer Proceedings in Physics;2020-11-28

3. A Review of Friction Stir Processing of Structural Metallic Materials: Process, Properties, and Methods;Metals;2020-06-09

4. Visualization of the Cargo Orientation in Space Under Movement by a Tower Crane in Low Visibility Conditions;Proceedings of EECE 2019;2020

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