The mechanism of improvement of contact resistivity in TFT-LCDs between IZO layers and Al-based metal lines by diffusion of Mo atoms
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference4 articles.
1. M.P. Hong, in: SID 2001, New Approaches to Process Simplification for Large Area and High Resolution TFT-LCD, p. 1148
2. Evaluation of Al(Nd)-alloy films for application to thin-film-transistor liquid crystal displays
3. P.M. Fryer et al., in: 1996 Society for Information Display International Symposium, 1996, p. 333
4. Reaction Mechanisms in Aluminum‐Indium Tin Oxide Ohmic Contact Metallization with Co and Ni Barrier Layers for Active‐Matrix‐Display Applications
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